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| UNISONIC TECHNOLOGIES CO., 2SC4617 GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 NPN EPITAXIAL SILICON TRANSISTOR 2 1 MARKING 3 C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free 2SC4617-AE3-R 2SC4617L-AE3-R Package SOT-23 Packing Tape Reel www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., 1 QW-R206-081,A 2SC4617 PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage DC Collector Current Power Dissipation Operating Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 60 50 7 150 150 +150 -40 ~ +150 UNIT V V V mA mW ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob TEST CONDITIONS IC= 50A IC= 1mA IE=50A VCB=60V VEB= 7V VCE=6V,Ic=1mA IC=50mA, IB=5mA VCE=12V, IE= -2mA, f=100MHz VCE= 12V, IE= 0A, f=1MHz MIN 60 50 7 TYP MAX UNIT V V V A A V MHz pF 120 180 2 0.1 0.1 560 0.4 3.5 CLASSIFICATION OF hFE RANK RANGE Q 120 ~ 270 R 180 ~ 390 S 270 ~ 560 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R206-081,A 2SC4617 TYPICAL CHARACTERICS NPN EPITAXIAL SILICON TRANSISTOR Grounded emitter propagation characteristics COLLECTOR CURRENT, IC (mA) 50 20 10 5 2 1 0.5 0.2 0.1 Ta=100 25 VCE = 6V Grounded emitter output characteristics () COLLECTOR CURRENT, IC (mA) 100 Ta = 25 80 60 0.20mA 0.50mA A 0 .45 m A 0 .40 m 0.35mA 0.30mA 0.25mA 40 20 0 0 0.4 0.8 1.2 0.15mA 0.10mA 0.05mA I B = 0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE, VBE (V) 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE, VCE (V) Grounded emitter output characteristics () 10 Ta = 25 30A 27 A 24 A 21 A 18 A 15 A DC current gain vs. collector current () 500 Ta = 25 VCC = 5V 3V 1V COLLECTOR CURRENT, IC (mA) 8 6 4 DC CURRENT GAIN, hFE 16 20 200 100 50 12 A 9 A 6A 3A 20 10 0.2 0.5 1 2 0 0 4 8 IB = 0A 12 2 5 10 20 60 100 200 COLLECTOR TO EMITTER VOLTAGE, VCE (V) COLLECTOR CURRENT, IC (mA) DC current gain vs. collector current () 500 Ta = 100 25 VCC = 5V 0.5 Collector-emitter saturation voltage vs. collector current Ta = 25 COLLECTOR SATURATION VOLTAGE, VCE(sat) (V) DC CURRENT GAIN, hFE 200 100 50 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 IC/IB = 5V 20 10 20 10 0.2 0.5 1 2 5 10 20 60 100 200 2 5 10 20 50 100 200 COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-081,A 2SC4617 TYPICAL CHARACTERICS(cont.) Collector-emitter saturation voltage vs. collector current () 0.5 NPN EPITAXIAL SILICON TRANSISTOR Collector-emitter saturation voltage vs. collector current () 0.5 IC/IB = 50 Ta = 100 25 COLLECTOR SATURATION VOLTAGE, VCE(sat) (V) 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 5 10 20 50 100 200 2 COLLECTOR CURRENT, I C (mA) Ta = 100 25 COLLECTOR SATURATION VOLTAGE, VCE(sat) (V) IC/IB = 10 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT, I C (mA) Collector output capacitance vs collector-base voltage . Emitter input capacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE, Cob (pF) EMITTER INPUT CAPACITANCE, Cib (pF) Gain bandwidth product vs emitter current . TRANSITION FREQUENCY, fT (MHz) Ta = 25 500 VCE =6V 20 10 Cib Ta=25 f=1MHz IE=0A IC=0A 200 5 100 2 Cob 50 -0.5 -1 1 1 2 0.2 0.5 5 10 20 50 COLLECTOR TO BASE VOLTAGE , VCB (V) EMITTER TO BASE VOLTAGE , VEB (V) -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT IE (mA) , BASE COLLECTOR TIME CONSTANT, Cc'rbb' (ps) Base-collector time constant vs. emitter current 200 100 50 Ta=25 f=32MHZ VCB=6V 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT, IE (mA) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R206-081,A |
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